v rrm = 1200 v - 1600 v i f(av) = 300 a features ? high surge capability heavy three tower package ? isolation type package ? not esd sensitive parameter symbol unit repetitive peak reverse voltage v rrm v dc blocking voltage v dc v operating temperature t j c msrta300120(a)d thru msrta300160(a)d msrta300140(a)d msrta300160(a)d 1400 conditions silicon standard recover y diode 1400 1200 ? types from 1200 v to 1600 v v rrm ? electrically isolated base plate maximum ratings, at t j = 25 c, unless otherwise specified 1200 1600 1600 - 55 to 1 50 - 55 to 1 50 - 55 to 1 50 msrta300120(a)d operating temperature j c storage temperature t stg c parameter symbol unit average forward current (per leg) i f(av) a maximum instantaneous forward voltage (per leg) a ma thermal characteristics maximum thermal resistance, junction - case (per leg) r jc c/w peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 3800 3800 v msrta300120(a)d msrta300140(a)d 10 t c = 125 c 300 300 300 3800 a conditions t j = 25 c i fm = 300 a, t j = 25 c msrta300160(a)d electrical characteristics, at tj = 25 c, unless otherwise specified 0.28 0.28 t j = 150 c 10 10 20 1.1 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f 0.28 1.1 1.1 55 to 50 20 20 55 to 50 55 to 50 -55 to 150 -55 to 150 -55 to 150 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
msrta300120(a)d thru msrta300160(a)d www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. msrta300120(a)d thru msrta300160(a)d www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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